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You may modify the stated parameters, and Assess it using a "great" result which usually takes two hrs siumlation time. According to your criteria, you could hasten the simulation time.
So can someone please demonstrate how FET with lower threshold voltage has greater velocity and higher leakage present-day even though FET with higher threshold will be sluggish but reduced on electric power?
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In case of lvt, conc. of doping and oxide thickness is much more Look at to hvt.. And this The main reason that far more the doping, so additional velocity and more leakage Examine to hvt.
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Normally popularsongs this occurs whenever you externally wire a crystal etc. - this introduces an extremely high velocity oscillator which bottlenecks the simulation and is completely superfluous anyway. Clock frequency is specified to be a assets of your microcontroller product.